Personnel

FICs - Prof. Philip K. T. Mok, Prof. Johnny K. O. Sin, and Prof. Wai Tung Ng (UT)

Description

BiCMOS technology, which combines bipolar and CMOS transistors in the same process, offers ultimate-performance integrated circuits with both bipolar high-power driving capabilities and CMOS low power consumption. Recent development of the BiCMOS process has significantly improved the cost/performance ratio of the process, resulting in a more-mature process suitable for many low-cost high-speed circuit applications in telecommunications.

This project is aimed at developing and using BiCMOS technology for low-cost telecommunication products such as high-performance cellular phones and global-positioning-system (GPS) units. The objectives are: to design a highly efficient BiCMOS RF power amplifier to replace the high-cost Gallium Arsenide power amplifier presently used in commercial telecommunication systems;

1. to design BiCMOS analog building blocks for transceiver applications, including a low-noise amplifier, mixer and voltage-controlled oscillator, as well as on-chip IC inductors which can be integrated with the RF power amplifier to complete the design of the fully-integrated RF front-end circuit module;
2. to develop an advanced BiCMOS process using selective-epitaxial-growth technology to further improve the high-frequency performance of RF power amplifiers for future telecommunication products.

Source: RGC | ITF